SESSION 3: Reading from FG-MOSFETs: Part- 1

Hello everyone. In previous sessions, we have discussed the method to program and erase an FG-MOSFET. 

And programmed state corresponds to binary 0, whereas erased state corresponds to binary 1.

Now the question here lies: how will you get to know whether your FG-MOSFET has a binary '0' or a binary '1' stored in it? In other words, how will you read the data present in FG-MOSFET?

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The answer lies in the threshold voltage.
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Now suppose I connect an FG-MOSFET to two batteries, one VGS between gate and source, and the other VDS between drain and source. See the figure below.

So the voltage VGS provides an electric field in the direction shown by the red arrows in the figure below:

Because of this electric field, the holes at the interface of p-type semiconductor and oxide layer are repelled away. The electrons appear at this interface from bulk of p-type semiconductor, thus forming an n-type channel between n-type source and n-type drain. Since this n-type channel is formed from p-type semiconductor, it's called inversion channel.

What role does VDS play here? It provides the field from Drain to Source, thus pulling electrons from Source to Drain via the inversion channel formed by applying VGS. 

You may visualize the above process in the video below. The small red circles represent the holes in p-type semiconductor and the small green circles represent the electrons. Note the inversion channel formation in the video.

In the above video, the flow of electrons indicates the flow of current in external circuit. 

Now, what if the voltage VGS  was not sufficient enough to create the inversion channel? Then obviously, current will not be able to flow.So for every FG-MOSFET, there is a particular value of VGS, only above which the inversion channel is formed and conduction takes place. This value is called threshold voltage, VT.

So, the conclusion till now is: 

The following graph represents the above relation between current IDS and VGS:

As we might intuitively conclude that increasing VDS shall also increase the current IDS (the greater the VDS, greater the pull on electrons via the channel), but does it go on forever?

Reason: Channel pinch-off

Let us see what is channel pinch-off and why does it occur in the next part of this session.

Eventually you will see these concepts clubbing together to build up the concept of reading from an FG-MOSFET.

Till then : "Thresholds are not the ends! Something definitely lies beyond them"

Find Previous Post here : SESSION2: Tunneling for Programming and Erasing FG-MOSFETs